NTD85N02R
160
10 V
120
4.4 V
5V
6V
V GS = 4 V
3.8 V
3.6 V
160
120
V DS ≥ 10 V
3.4 V
80
40
0
3.2 V
3V
2.8 V
2.6 V
2.4 V
80
40
0
T J = 25 ° C
T J = 125 ° C
T J = ?55 ° C
0
2
4
6
8
10
0
1
2
3
4
5
6
0.018
0.014
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
V GS = 10 V
0.018
0.014
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
V GS = 4.5 V
0.010
T J = 125 ° C
0.010
T J = 125 ° C
T J = 25 ° C
0.006
T J = 25 ° C
T J = ?55 ° C
0.006
T J = ?55 ° C
0.002
0
40
80
120
160
0.002
0
40
80
120
160
I D , DRAIN CURRENT (AMPS)
Figure 3. On?Resistance versus Drain Current
and Temperature
I D , DRAIN CURRENT (AMPS)
Figure 4. On?Resistance versus Drain Current
and Temperature
1.8
1.6
1.4
I D = 40 A
V GS = 10 V
100,000
10,000
V GS = 0 V
T J = 150 ° C
1.2
1.0
0.8
0.6
1000
100
T J = 125 ° C
?50
?25
0
25
50
75
100
125
150
0
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
versus Voltage
相关PDF资料
NTD95N02RT4G MOSFET N-CH 24V 12A DPAK
NTDV18N06LT4G MOSFET N-CH 60V 18A DPAK
NTDV20N06T4G MOSFET N-CH 60V 20A DPAK
NTDV3055L104-1G MOSFET N-CH 60V 12A IPAK
NTDV5804NT4G MOSFET N-CH 40V 69A DPAK
NTF3055-100T3LF MOSFET N-CH 60V 3A SOT223
NTF3055-160T1 MOSFET N-CH 60V 2A SOT223
NTF3055L108T3LFG MOSFET N-CH 60V 3A SOT223
相关代理商/技术参数
NTD85N02R-1G 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD85N02RG 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD85N02RT4 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD85N02RT4G 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD95N02R 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD95N02R-001 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD95N02R-001G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
NTD95N02R-1G 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube